Prof. Dr. Artur Erbe , HZDR / TU Dresden

Friday Get-together: “Characterisation of 2D-semiconductors for (opto-)electronics”

22.05.2026 (Friday) , 14:00 - 15:00

Abstract:

Two-dimensional semiconductors provide fascinating prospects for optoelectronics, because they combine charge transport with high mobility and tuneable optical gaps. In addition, they can be stacked building heterostructures using van der Waals interaction, thus expanding the range of possible applications by far. Many of those materials are, however, sensitive to air and other environmental influences. Examples of such materials are InSe, GaSe, and black phosphorus (BP). Therefore, it is essential to encapsulate the materials in order to stabilise their properties for extended times. We have shown that the materials mentioned above are stable when encapsulated with thin layers of hexagonal boron nitride (hBN), and can, at the same time, be electrically contacted using via contacts created through the hBN-layers by dry etching. In addition, 2-dimensional materials can be modified using ion beam irradiation, which on the one hand leads to the creation of defects, on the other hand also creates additional charge carriers. We investigate the role of these modifications in samples with and without encapsulation. The influence of the underlying substrate is derived from the comparison between these two cases.