Dr.-Ing. Giulio Galderisi , NaMLab gGmbH
Friday Get-together: “Reconfigurable Field-Effect Transistors: A Versatile Technology as CMOS Add-On”
11.12.2026 (Friday)
, 14:00 - 15:00
various (see below)
- Dresden: Barkhausenbau Room BAR E64A
- Aachen: new Walter Schottky Haus Room B101/B102 (tbc)
- Halle/RUB: at your institutions
- Online: available
- Giulio will be present at BAR E64A TU Dresden
Abstract:
Reconfigurable Field-Effect Transistors (RFETs) are emerging devices based on intrinsic semiconducting channels, source and drain Schottky barrier contacts,
and multiple independent gates. Their device-level features, such as run-time polarity control and multiple threshold modes, translate into circuit and systemlevel
benefits that complement traditional architectures with extended features and functionalities. RFETs have recently been transferred to an industrial 22nm
FDSOI technology, attracting increasing attention in applications such as hardware security, tunable analog circuits, energy-efficient architectures, and
sensor electronics.
Bio:
Giulio Galderisi is a scientist at NaMLab gGmbH since 2020. In 2024 he was awarded with the prestigious IEEE Electron Devices Society PhD Fellowship. In
the same year, he won the IEEE IPFA Best Paper in Reliability. In 2025, he received his Ph.D. in Electrical Engineering from Technical University of Dresden,
summa cum laude. Currently, he is author of 37+ peer-reviewed papers.