Two-Dimensional Transistors Beyond Silicon: Materials and Interface Engineering for Ultra-Low-Power Electronics

Prof. Lance Li is Distinguished Professor in the Department of Materials Science at the National University of Singapore, and has been Director of the Corporate Research at Taiwan Semiconductor Manufacturing Company (TSMC) from  2017 to 2020. In this talk, titled “Two-Dimensional Transistors Beyond Silicon: Materials and Interface Engineering for Ultra-Low-Power Electronics”, he will present the recent results of his group on MoS₂/WSe₂ transistors, in particular on the engineering of the critical  interfaces between metal and 2D-material and on vertically integrated CFET circuits.

Abstract:

The growing energy demand of computing is shifting the focus of transistor scaling from device density toward energy-efficient operation. Atomically thin semiconductors such as MoS₂ and WSe₂ offer excellent electrostatic control and carrier transport at scaled dimensions, making them promising candidates for low-power electronics beyond silicon.

Translating these intrinsic advantages into practical technologies requires scalable growth of electronics-grade 2D semiconductors together with precise engineering of their critical interfaces. At metal–2D interfaces, Fermi-level pinning, carrier injection, contact resistance, and contact-length scaling govern transistor performance. At high-κ dielectric–2D interfaces, dielectric integration, interface quality, and threshold-voltage control determine gate efficiency, leakage, and low-voltage operation. I will discuss on our recent progress in engineering these interfaces and their integration into complementary MoS₂/WSe₂ transistors and vertically integrated CFET circuits. Collectively, these advances establish a pathway from scalable 2D materials and interface engineering to practical ultra-low-power electronics beyond silicon.