10th Anniversary Symposium on Schottky Barrier MOS Devices Co-hosted by Active-3D
Joachim Knoch of RWTH Aachen Successfully Hosted Symposium
From 31 August to 1 September, Joachim Knoch hosted the 10th edition of the annual Symposium on Schottky Barrier MOS Devices (SSBMOS).
The goal of the symposium is to promote the research of Schottky barrier devices worldwide. The topics covered all materials in which Schotty barrier transistors can be realized (one- and two-dimensional devices, oxide and organic semiconductors, all types of inorganic semiconductors), as well as a wide range of potential applications (embedded electronics, reconfigurable logic, analog circuits, cryo-electronics, quantum computing and neuromorphic applications).
Over 20 speakers from all over Europe contributed to the two-day program.
We are looking forward to the next edition of SSBMOS in 2027.