Next Generation Electronics
With Active Devices

in Three Dimensions

Next Generation Electronics With Active Devices

in Three Dimensions

Broad spectrum. Novel hybrid material proves an efficient photodetector

Press release from HZDR, 9 April, 2020

[Press release from Helmholtz-Zentrum Dresden-Rossendorf (HZDR) on a cooperative work with cfaed's Chair for Molecular Functional Materials (Prof. Xinliang Feng) at TU Dresden | Deutsche Version unter "read more"]

Digital cameras as well as many other electronic devices need light-sensitive sensors. In order to cater for the increasing demand for optoelectronic components of this kind, industry is searching for new semiconductor materials. They are not only supposed to cover a broad range of wavelengths but should also be inexpensive. A hybrid material, developed in Dresden, fulfills both these requirements. Himani Arora, a physics PhD student at Helmholtz-Zentrum Dresden-Rossendorf (HZDR), demonstrated that this metal-organic framework can be used as a broadband photodetector. As it does not contain any cost-intensive raw materials, it can be produced inexpensively in bulk.

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