Guest Talk: Artur Erbe "Characterisation of 2D-semiconductors for (opto-)electronics"

In today's Friday Get-together we welcomed Prof. Artur Erbe, head of the nanoelectronics department Helmholtz-Zentrum Dresden-Rossendorf (HZDR).

In his presentation "Characterisationof 2D-semiconductors for (opto-)electronics", Artur talked about two-dimensional semiconductors that are promising for optoelectronics because they combine high-mobility charge transport with tunable optical properties and can form versatile van der Waals heterostructures. Since materials such as Indium Selenide, Gallium Selenide, and Black Phosphorus are highly sensitive to environmental exposure, Artur and his team demonstrated that encapsulation with Hexagonal Boron Nitride stabilizes them while still allowing electrical contacts, and further examined how ion beam irradiation and substrate interactions affect encapsulated and non-encapsulated samples.

Thank you Artur for this inspiring afternoon.