Investigating the Doping of Organic Semiconductors: Research Group at the Center for Advancing Electronics Dresden (cfaed) Simulates Doping Mechanism

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A group of physicists from the cfaed at TU Dresden, together with researchers from Japan, were able to demonstrate in a study how the doping of organic semiconductors can be simulated and experimentally verified. The study has now been published in “Nature Materials”.

In semiconductor technology, doping refers to the intentional introduction of impurities (also known as dopants) into a layer or into the intrinsic semiconductor of an integrated circuit. These dopants are deliberate modifications of the semiconductor, with which the behavior of the electrons and thus the electrical conductivity of the intrinsic material can be controlled. Even the smallest amounts of dopants can have a strong impact on the electrical conductivity. Electronic modifications by doping make semiconductors functional in all major electronic devices – the backbone of the electronics industry.