Next Generation Electronics
With Active Devices

in Three Dimensions

Next Generation Electronics With Active Devices

in Three Dimensions

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A02 Under Voltage Control: Nb2O5 Based Locally Active Threshold Switches

Threshold switches allow to implement signal amplification in a two-terminal device. One possible application is to solve NP-hard problems, that are very difficult to solve using the von Neumann architecture, using coupled oscillator circuits. In Phase 1 the solution for one such example problem is guiding the research. In line with the subject of this TRR oscillator cells will be integrated into the BEOL of CMOS chips, where the reconfigurable coupling itself is to be realized by conventional transistor circuits in Phase 1. In Phase 2 the conventional transistors will be replaced by BEOL compatible transistors developed within the TRR, such as RFETs or 2D-materials based devices, and
additional applications of the threshold switches such as neurons and similar devices will be explored.

Dr.
Stefan Slesazeck

Reconfigurable Devices

Project Leader

A01 A02

Prof.
Ronald Tetzlaff

Fundamentals of Electrical Engineering

Project Leader

A02
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Eter Mgeladze

PhD Student

Project

A02