A06 2D Field-Effect Transistors
2D materials promise further device scaling and improvement of device performance and are already considered for future electronics. The group at AMO in Aachen is a leader in the research on practical devices based on 2D materials. Since here the channel material is decoupled from the wafer, integration into the BEOL is a natural choice although some significant issues remain to be solved. Within the TRR this project will supply lateral devices with different performance levels.
Prof. Dr.-Ing. Juliana Panchenko
TU Dresden
Dr.-Ing. habil. Lukas Lorenz
Fraunhofer IPMS
Friday Get-together: “Hochdichte Chipletsysteme dank quasi-monolithischer Integration”