A06 2D Field-Effect Transistors
2D materials promise further device scaling and improvement of device performance and are already considered for future electronics. The group at AMO in Aachen is a leader in the research on practical devices based on 2D materials. Since here the channel material is decoupled from the wafer, integration into the BEOL is a natural choice although some significant issues remain to be solved. Within the TRR this project will supply lateral devices with different performance levels.
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MRS Workshop: Materials and Architecture Co-Design for Energy-Efficient Data Storage and Computing
Prof. Dr. Wenke Weinreich
Fraunhofer IPMS // TU Dresden
Dr.-Ing. Giulio Galderisi
NaMLab gGmbH