A06 2D Field-Effect Transistors
2D materials promise further device scaling and improvement of device performance and are already considered for future electronics. The group at AMO in Aachen is a leader in the research on practical devices based on 2D materials. Since here the channel material is decoupled from the wafer, integration into the BEOL is a natural choice although some significant issues remain to be solved. Within the TRR this project will supply lateral devices with different performance levels.
Maximilian Thomas Birch
RIKEN Center for Emergent Matter Science, Japan
Emergent phenomena in nanosculpted devices of quantum materials
Michael Niemier
Professor and Associate Department Chair, Computer Science and Engineering, University of Notre Dame, USA