Next Generation Electronics
With Active Devices

in Three Dimensions

Next Generation Electronics With Active Devices

in Three Dimensions

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A07 Vertical Perovskite Field-Effect Transistors

For high frequency applications a vertical device architecture with very small dimensions is more beneficial compared to lateral device architectures. Perovskite materials have had great success in the field of improved solar cells. However, their application to other semiconductor devices is not explored in the same way. They offer distinct benefits in terms of integration technology for the BEOL. Based on the leading activities in perovskite solar cells at TUD and the integration know-how at AMO (M. Mohammadi), here a novel, vertical device concept utilizing perovskites will be at the center of the research. Within the TRR the project will demonstrate the concept in Phase 1 and supply vertical devices with medium to high performance.

Dr.
Maryam Mohammadi

Perovskite Optoelectronics

Project Leader

A07

Prof.
Yana Vaynzof

Emerging Electronic Technologies

Project Leader

A07
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Federico Fabrizi

PhD Student

Project

A07
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Zuzanna Molenda

Postdoc

Project

A07