Next Generation Electronics
With Active Devices

in Three Dimensions

Next Generation Electronics With Active Devices

in Three Dimensions

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B01 ECM-Type Devices as 3D Programmable Interconnects

For creating the maximum benefit out of having active devices in the BEOL we need the possibility to re-wire the circuits on demand. While this can be done using transistors, a direct reconfigurable wiring scheme would be much more efficient. To this end we will build on the longstanding experience of the group at Forschungszentrum Jülich (FZJ) with electrochemical metallization resistive switching cells which provide many possibilities for the implementation of filamentary interconnects between two metallic electrodes. Based on this experience a new and flexible programmable routing scheme has been proposed that will be another flexible option to reconfigure circuits that can be used on the system level. The aim of during Phase 1 is to demonstrate the feasibility of such a flexible and programmable wiring approach based on the directional growth of filamentary interconnects.

Prof.
Joachim Knoch

(Research Area Leader A)

Semiconductor Electronics

Project Leader

A05 B01

Prof.
Ilia Valov

Nanoelectrochemistry

Project Leader

B01

Yaohui Liu

PhD Student

Project

B01
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Carolin Buro

PhD Student

Project

B01