One of the key features that make the approach of the active-3D very rewarding is the fact that switching devices and memory devices can be placed in close vicinity. The role of this project is to evaluate the potential of full-BEOL 1T1R elements realized by co-integration of a 2D-FET and a VCM device. In this sense, B02 already demonstrates the BEOL combination of two new elements as a starting point for further phases of the TRR. Moreover, this basic element allows to realize energy-efficient matrix-vector-multiplication on crossbar-arrays of 1T1R elements exploiting Kirchhoff’s laws.
