Next Generation Electronics
With Active Devices

in Three Dimensions

Next Generation Electronics With Active Devices

in Three Dimensions

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B03 Reliability Assessment

When bringing new electronic devices – both logic and memory – into practical systems, reliability is often the limiting factor. In this TRR we expect new reliability effects to show up since we use BEOL compatible materials and processes that have inherent higher defect density as well as novel device architectures. The role of this project is to assess the reliability on the device level already in an early phase, give feedback to the projects of Research Area A for required improvements on the device level and build a database that can be used in Phase 2 and 3 to establish tailored fault and degradation models and tolerance strategies to overcome the identified reliability issues.

Dr.
Benjamin Max

Semiconductor processes, devices and integration

Project Leader

B03

Harsh Vishnukant Khedwal

PhD Student

Project

B03

Maximilian Thomas Birch

RIKEN Center for Emergent Matter Science, Japan

Emergent phenomena in nanosculpted devices of quantum materials

Michael Niemier

Professor and Associate Department Chair, Computer Science and Engineering, University of Notre Dame, USA

tba

2026 MRS Spring Meeting

2026 EMRS Spring Meeting