Publications
| Nr. | Subproject | Publication | Year |
|---|---|---|---|
| 61 | A07 | Molenda, Z., Scalon, L., Singh, S. & Vaynzof, Y. Interfacial Energetics in Metal Halide Perovskite Solar Cells. In: Chemical reviews. 126, 17, p. 9725-9794 70 p. 9 Sept 2026. https://doi.org/10.1021/acs.chemrev.5c00782 | 2026 |
| 60 | A04 | Das, A.; Schneider, S.; Jeon, J.-C.; Kwon, J.; Parkin, S. S. P. High Resolution Imaging of Ultrathin PMA Films for Racetrack Applications, 2026. | 2026 |
| 59 | C03; C02 | Yu, C.; Schneider, S.; Rellinghaus, B.; Jungemann, C. Drift‑Diffusion Simulation for Quantitative Interpretation of STEM‑EBIC on FIB‑Prepared Silicon p‑n Junctions, 2026. | 2026 |
| 58 | C02 | Chen, Y.; Storelli, D.; Zhao, X.; Bende, A.; Manea, P.-P.; Artner, O.; Ashok, A.; Winterberg, K.; Paul, G.; Jia, S.; Roth, C.; Kusuma, S.; Schiek, M.; Rana, V.; Wouters, D.; Menzel, S.; Zambanini, A.; Grewing, C.; Wiefels, S.; Hoffmann‑Eifert, S.; Strachan, J. P.; Waasen, S. van; Dittmann, R. OTTER – Two Transistor – One RRAM Architecture for Reliable In‑Memory‑Computing in 28 Nm CMOS Technology. arXiv September 8, 2026. https://doi.org/10.48550/arXiv.2609.08898 | 2026 |
| 57 | A07; B04 | Baskent, E.; Uzlu, B.; Wang, K.-T.; Wang, Z.; Lemme, M. C.; Negra, R. Compact Metal‑Insulator‑Graphene Diode‑Based Differential Distributed Phase Shifter. IEEE Microw. Wireless Tech. Lett. 2026, 1‑4. https://doi.org/10.1109/LMWT.2026.3727345 | 2026 |
| 56 | A04 | Jeon, J.-C.; Fischer, L.; Li, Y.-C.; Lei, R.; Parkin, S. S. P. Opportunities toward Scalable Domain‑Wall‑Based Spintronic Devices. ACS Nanoscience Au 2026. https://doi.org/10.1021/acsnanoscienceau.6c00113 | 2026 |
| 55 | A03 | Köttgen, J.; Driesch, N. von den; Pawlis, A.; Wuttig, M. Understanding and Designing Phase Change Materials: Insights from Atom Probe Tomography. arXiv August 5, 2026. https://doi.org/10.48550/ARXIV.2608.03932 | 2026 |
| 54 | A01 | Spithouris, D.; Hellwig, J.; Greatorex, H.; Wittberg, C.; Koutsogiannis, P.; Magén, C.; Chicca, E.; Dittmann, R. Volatile Memristive Devices With Tunable Temporal Dynamics For Event‑Based Sensing. Advanced Materials 2026, e74813. https://doi.org/10.1002/adma.74813 | 2026 |
| 53 | A01; C03; C02; B02 | Buczek, M.; Dossayev, I. T.; Wittberg, C.; Liu, Y.; Goß, K.; Mueller, D. N.; Moos, Z.; Liu, Z.; Bittkau, K.; Sultani, M. H.; Menzel, S.; Hoffmann‑Eifert, S.; Dittmann, R. Amorphous, Highly Conductive Pr₀.₇ Ca₀.₃ MnO₃ for Area‑Dependent Resistive Switching AlOₓ Bilayer Devices. Adv Elect Materials 2026, 12 (17), e00556. https://doi.org/10.1002/aelm.202500556 | 2026 |
| 52 | A03; A05; B01 | Cui, H.; Zheng, K.; Knoch, J.; Ingebrandt, S. Van Der Waals Integration of Tellurium Nanowires With Graphene Oxide for Performance‑Enhanced Ion‑Sensitive Field‑Effect Transistors. Small 2026, e75853. https://doi.org/10.1002/smll.75853 | 2026 |
| 51 | B07 | Aliagha, E.; Amutha, V. S. M.; Göhringer, D. FT‑CGRA: Compiler‑Transparent Fault Tolerance for CGRAs. In 2026 IEEE 37th International Conference on Application‑specific Systems, Architectures and Processors (ASAP); IEEE: London, United Kingdom, 2026; pp 117‑124. https://doi.org/10.1109/ASAP71856.2026.00027 | 2026 |
| 50 | A04 | Dong, T.; Deka, J.; Fang, C.; Farinha, A. M. A.; Guan, Y.; Yang, S.; Parkin, S. S. P. Current‑Induced Domain Wall Dynamics in Pt/Co/Ni/Co Nanoribbons With Curvilinear Cross‑Sections. Advanced Materials 2026, e74919. https://doi.org/10.1002/adma.74919 | 2026 |
| 49 | C03 | Makino, H.; Rellinghaus, B.; Schneider, S.; Lubk, A.; Pohl, D. Noise Estimation and Suppression in Quantitative EMCD Measurements. Ultramicroscopy 2026, 284, 114372. https://doi.org/10.1016/j.ultramic.2026.114372 | 2026 |
| 48 | C03; A04 | Winter, M.; Pignedoli, A.; Rahn, M. C.; Sukhanov, A. S.; Achinuq, B.; Bollard, J. R.; Azhar, M.; Everschor‑Sitte, K.; Pohl, D.; Schneider, S.; Tahn, A.; Ukleev, V.; Valvidares, M.; Thomas, A.; Wolf, D.; Vir, P.; Helm, T.; Van Der Laan, G.; Hesjedal, T.; Geck, J.; Felser, C.; Rellinghaus, B. Field‑Induced Condensation of π to 2π Soliton Lattices in Chiral Magnets. Commun Phys 2026, 9 (1), 264. https://doi.org/10.1038/s42005-026-02785-3 . | 2026 |
| 47 | A03; A05 | Frahm, T.; Liebisch, P.; Heiß, J.; Ingebrandt, S.; Knoch, J. Mitigating the Degradation of Metal‑Semiconductor Contacts with Optimized Electron Beam Evaporation. Micro and Nano Engineering 2026, 32, 100368. https://doi.org/10.1016/j.mne.2026.100368 . | 2026 |
| 46 | A03 | Zhou, X.; Pan, Y.; Grap, T.; Ingebrandt, S.; Gao, Z. Design and Fabrication of Complex Micro‑Nano Structures for Osteogenesis Interfacing in 3D. Small Structures 2026, 7 (8), e70554. https://doi.org/10.1002/sstr.70554 . | 2026 |
| 45 | B05 | Darjani, A.; Ramasamy, P.; Kavand, N.; Kumar, A. EAGEL: Explainable And Generalized Structural Exploitation Against Logic Locking. In Proceedings of the Great Lakes Symposium on VLSI 2026; ACM: Canandaigua, NY, USA, 2026; pp 156‑163. https://doi.org/10.1145/3787109.3815258 . | 2026 |
| 44 | A07 | Bou, A.; Riquelme, A. J.; Shilovskikh, V.; Rivkin, B.; Vaynzof, Y. Emergence of Memristive Behavior in Perovskite Devices by Stoichiometric Engineering. ACS Energy Lett. 2026, 11 (5), 4094‑4102. https://doi.org/10.1021/acsenergylett.6c00659 . | 2026 |
| 43 | B05 | Kavand, N.; Niranjan, T.; Darjani, A.; Kumar, A. RETRO: Mitigating Power Side‑Channel Attacks with Reconfigurable RFET‑Based Ring Oscillators. In 2026 Design, Automation & Test in Europe Conference (DATE); IEEE: Verona, Italy, 2026; pp 1‑7. https://doi.org/10.23919/DATE69613.2026.11539368 . | 2026 |
| 42 | A01; A02 | Yuan, P.; Schnieders, K.; Wang, Y.; Ntinas, V.; Pereira, M. E.; Rana, V.; Ascoli, A.; Tetzlaff, R.; Dittmann, R.; Menzel, S. Novel M‑CNN Design Fostering Gradual Switching of InGaZnO(IGZO)‑Based Memristive Devices. In 2026 IEEE International Symposium on Circuits and Systems (ISCAS); IEEE: Shanghai, China, 2026; pp 4538‑4542. https://doi.org/10.1109/ISCAS66217.2026.11562042 . | 2026 |
| 41 | A01 | Hellwig, J.; Wittberg, C.; Spithouris, D.; Dittmann, R. Two Coexisting Pathways to Volatility in Valence‑Change Memory Devices. Adv Funct Materials 2026, e77515. https://doi.org/10.1002/adfm.77515 . | 2026 |
| 40 | A01; C02; B02 | Artner, O.; Cüppers, F.; Son, S.; Chen, Y.; Liu, X.; Bengel, C.; Nielinger, D.; Zambanini, A.; Wiefels, S.; Menzel, S.; Dittmann, R.; Hoffmann‑Eifert, S. The Influence of Residual Ion Drift During Programming of Chip‑Integrated Nanoscale HfO₂‑Based Memristive Devices. Adv Elect Materials 2026, e00891. https://doi.org/10.1002/aelm.202500891 . | 2026 |
| 39 | A07 | Starodubtceva, L.; Kadid, A.; Kurahashi, N.; Kreusel, C.; Ruhkopf, J.; Lukas, S.; Plachetka, U.; Heiderhoff, R.; Riedl, T.; Mohammadi, M.; Lemme, M. C. Improved Heat Dissipation in CsPbBr₃‑hBN Heterostructures. Mater. Adv. 2026, 10.1039.D6MA00217J. https://doi.org/10.1039/D6MA00217J . | 2026 |
| 38 | A07 | Fabrizi, F.; Esteki, A.; Lerch, H.; Goudarzi, S.; Starodubtceva, L.; Müller‑Newen, G.; Mohammadi, M.; Lemme, M. C. Wafer‑Scale Top‑Down Patterning of Metal Halide Perovskites. Zenodo August 31, 2026. https://doi.org/10.5281/ZENODO.21285455 . | 2026 |
| 37 | A01; C03 | Yuan, P.; Wittberg, C.; Deuermeier, J.; Elias Pereira, M.; Liu, Y‑P.; Mueller, D. N.; Kiazadeh, A.; Dittmann, R. Band‑Engineering in Area‑Dependent InGaZnO(IGZO)‑Based Memristive Devices. Front. Nanotechnol. 2026, 8, 1870683. https://doi.org/10.3389/fnano.2026.1870683 . | 2026 |
| 36 | A01; B02 | Sudarshan, C.; Artner, O.; Manea, P.; Siegel, S.; Hoffmann‑Eifert, S.; Dittmann, R.; Strachan, J. P. A Flexible and Energy‑Efficient Compute‑in‑Memory Accelerator for Kolmogorov‑Arnold Networks. Advanced Intelligent Systems 2026, e202501220. https://doi.org/10.1002/aisy.202501220 . | 2026 |
| 35 | A03 | Khan, D.; Homma, C.; Romdhane, A. B.; Bahri, H.; Du, X.; Vu, X. T.; Ingebrandt, S.; Pachauri, V. A Distributed Bragg Reflector Interface for Filter‑Free Fluorescence Spectro‑Microscopy With High Spectral Tunability. Physica Status Solidi (a) 2026, 223 (8), e70337. https://doi.org/10.1002/pssa.70337 . | 2026 |
| 34 | A03 | Pfeiffer, R. Optimizing Crystallization Kinetics and Reducing Stochasticity of the Phase‑Change Materials Sb₂Se₃ and Ge₂SeTe through Controlled Crystalline Interface Growth; DPG Spring Meeting, Dresden, Germany, 2026. | 2026 |
| 33 | A07 | Mohammadi, M.; Stoll, S. L.; Herrero, A. F.; Khan, S.; Fabrizi, F.; Gollwitzer, C.; Wang, Z.; Anantharaman, S. B.; Lemme, M. C. Wafer‑Scale Synthesis of Mithrene and Its Application in UV Photodetectors. Adv Funct Materials 2026, 36 (15), e17857. https://doi.org/10.1002/adfm.202517857 . | 2026 |
| 32 | A01 | Moos, Z.; Buczek, M.; Liu, Z.; Manu, A.; Gutsche, A.; Dittmann, R. CMOS Integration of Area‑Dependent Pr₀.₇Ca₀.₃MnO₃‑Based ReRAM‑Devices; 8th International Conference on Memristive Materials, Devices & Systems (MEMRISYS 2025), Edinburgh, United Kingdom, 2025. | 2025 |
| 31 | A01 | Wittberg, C.; Spithouris, D.; Hellwig, J.; Dittmann, R. Identifying the Electronic and Ionic Transport in Area‑Dependent VCM.; 8th International Conference on Memristive Materials, Devices & Systems (MEMRISYS 2025), Edinburgh, United Kingdom, 2025. | 2025 |
| 30 | A03 | Wuttig, M. Designing Thermoelectrics by Tailoring Chemical Bonds; MRS Fall Meeting, Boston, USA, 2025. | 2025 |
| 29 | A03 | Wuttig, M. Tailoring Phase Change Materials for Different Applications: The Role of Metavalent Bonding; EP\COS 2025, Marseille, France, 2025. | 2025 |
| 28 | C03 | Schneider, S.; Pohl, D.; Rellinghaus, B. Perspectives and Limitations of STEM EBIC Measurements for the Characterization of Semiconductor Devices. Microscopy and Microanalysis 2025, 31 (Supplement_1), ozaf048.888. https://doi.org/10.1093/mam/ozaf048.888 . | 2025 |
| 27 | B06 | Khan, Asif Ali, and Jeronimo Castrillon. "LearnCNM2Predict: Transfer Learning‑based Performance Model for CNM Systems." https://cfaed.tu-dresden.de/files/Images/people/chair-cc/publications/2507_daSilva_SAMOS.pdf | 2025 |
| 26 | B07 | Shadmehri, H. H.; Lanius, C.; Gemmeke, T. A (145, 128) DEC‑TED BCH Decoder with Composite Field and Redundant Arithmetic. In 2025 IEEE Nordic Circuits and Systems Conference (NorCAS); IEEE: Riga, Latvia, 2025; pp 1‑7. https://doi.org/10.1109/NorCAS66540.2025.11231200 . | 2025 |
| 25 | A07 | Fabrizi, F.; Goudarzi, S.; Khan, S.; Mohammad, T.; Starodubtceva, L.; Cegielski, P. J.; Thiel, F.; Özen, S.; Schiffer, M.; Lang, F.; Bolívar, P. H.; Riedl, T.; Müller‑Newen, G.; Anantharaman, S. B.; Mohammadi, M.; Lemme, M. C. A Versatile Top‑Down Patterning Technique for Perovskite On‑Chip Integration. ACS Nano 2025, 19 (33), 30428‑30440. https://doi.org/10.1021/acsnano.5c10397 . | 2025 |
| 24 | B06 | De Lima, J. P. C.; Moghadam, M. S.; Aygun, S.; Castrillon, J.; Najafi, M. H.; Khan, A. A. All‑in‑Memory Stochastic Computing Using ReRAM. In 2025 62nd ACM/IEEE Design Automation Conference (DAC); IEEE: San Francisco, CA, USA, 2025; pp 1‑7. https://doi.org/10.1109/DAC63849.2025.11132096 . | 2025 |
| 23 | A06 | Rudenko, T.; Gomeniuk, Y. V.; Slobodian, O.; Lytvyn, P.; Reato, E.; Esteki, A.; Lemme, M. C.; Nazarov, A. Application of Gate‑to‑Channel Capacitance Measurements for Extraction and Investigation of the Effective Mobility in MoS₂ Field Effect Transistors with Hysteresis of Electrical Characteristics. Phys. Scr. 2026, 101 (10), 105909. https://doi.org/10.1088/1402-4896/ae4ae6 . | 2026 |
| 22 | B06 | Farzaneh, H.; Khan, A. A.; Castrillon, J. CoMoNM: A Cost Modeling Framework for Compute‑Near‑Memory Systems. arXiv 2025. https://doi.org/10.48550/ARXIV.2508.11451 . | 2025 |
| 21 | B06 | Castrillon, J. Compiler Support for Ferroelectric Compute‑in‑Memory Solutions (and Beyond), 205 AD. | 2025 |
| 20 | B06 | De Lima, J. P. C.; Morris, B.; Khan, A. A.; Castrillon, J.; Jones, A. K. Count2Multiply: Reliable In‑Memory High‑Radix Counting. In 2026 IEEE International Symposium on High Performance Computer Architecture (HPCA); IEEE: Sydney, Australia, 2026; pp 1‑15. https://doi.org/10.1109/HPCA68181.2026.11408436 . | 2026 |
| 19 | B06 | Hu, X. S.; Lee, M.-Y.; Li, M.; Lima, J. P. C. D.; Liu, L.; Zhu, Z.; Castrillon, J.; Niemier, M.; Wang, Y. Cross‑Layer Design and Design Automation for In‑Memory Computing Based on Non‑volatile Memory Technologies. IEEE Des. Test 2025, 42 (6), 75‑86. https://doi.org/10.1109/MDAT.2025.3603495 . | 2025 |
| 19 | B06 | Hu, X. S.; Lee, M.-Y.; Li, M.; Lima, J. P. C. D.; Liu, L.; Zhu, Z.; Castrillon, J.; Niemier, M.; Wang, Y. Cross‑Layer Design and Design Automation for In‑Memory Computing Based on Non‑volatile Memory Technologies. (duplicate entry, year 2026 in original list) | 2026 |
| 18 | B06 | Castrillon, J., Giceva, J., Hua, Y., Keeton, K., Shekar, A., Skadron, K., … & Zhang, H. Declarative Memory Services. CIDR 2026. 16th Annual Conference on Innovative Data Systems Research (CIDR ’26). January 18‑21, Chaminade, USA https://mail.vldb.org/cidrdb/papers/2026/p21-castrillon.pdf | 2026 |
| 17 | C01; A05; B05 | Kavand, N.; Darjani, A.; Bhattacharjee, N.; Quijada, J. N.; Martinez, J. P.; Mikolajick, T.; Trommer, J.; Kumar, A. Design and Evaluation of an RFET Standard Cell Library Compatible with 22 Nm FDSOI. IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst. 2026, 1‑1. https://doi.org/10.1109/TCAD.2025.3649810 . | 2026 |
| 16 | B06 | De Lima, J. P. C.; Dietrich, M.; Castrillon, J.; Khan, A. A. Efficient In‑Memory Acceleration of Sparse Block Diagonal LLMs. In 2025 Cross‑Disciplinary Conference on Memory‑Centric Computing (CCMCC); IEEE: Dresden, Germany, 2025; pp 1‑8. https://doi.org/10.1109/CCMCC67628.2025.11380618 . | 2025 |
| 15 | A07 | Khan, S.; Goudarzi, S.; Schäffer, S.; Sonneveld, L.; Macco, B.; Ran, K.; Kurahashi, N.; Bolívar, P. H.; Ehrler, B.; Riedl, T.; Müller‑Newen, G.; Anantharaman, Surendra B.; Mohammadi, M.; Lemme, Max C. Facile Synthesis and On‑Chip Color Tuning of CsPbBr₃@CsPbBr₃₋ₓTFAₓ Nanoplatelets via Ion Engineering. arXiv 2025. https://doi.org/10.48550/ARXIV.2509.16290 . | 2025 |
| 14 | B05 | Darjani, A.; Kavand, N.; Kumar, A. Flip‑Break: Breaking Flip‑Flop‑Based Logic Locking in Sequential Circuits. In Proceedings of the Great Lakes Symposium on VLSI 2025; ACM: New Orleans LA USA, 2025; pp 463‑469. https://doi.org/10.1145/3716368.3735189 . | 2025 |
| 13 | B05 | Darjani, A.; Kavand, N.; Kumar, A. Flip‑Un‑Lock: An Anomaly Detection Attack on Flip‑Flop‑Based Logic Locking. In 2025 IEEE Computer Society Annual Symposium on VLSI (ISVLSI); 2025; Vol. 1, pp 1‑6. https://doi.org/10.1109/ISVLSI65124.2025.11130332 . | 2025 |
| 12 | B05 | Ullah, S.; Sahoo, S. S.; Li, C.; Li, C.; Liu, L.; Pereira, T. S.; Wen, B.; Yin, X.; Darjani, A.; Kavand, N.; Bodla, C.; Panduga, R. Y.; Holemadlu, A.; Maly, J.; Förste, J.; Vadia, S.; Hu, X. S.; Kumar, A. Invited Paper: Circuit and Architecture Design with Emerging Computing Paradigms. In 2025 IEEE/ACM International Conference On Computer Aided Design (ICCAD); IEEE: Munich, Germany, 2025; pp 1‑9. https://doi.org/10.1109/ICCAD66269.2025.11240725 . | 2025 |
| 11 | A07 | Sana Khan, Surendra B. Anantharaman, Maryam Mohammadi, Max C. Lemme, Monitoring Halide Exchange in Perovskite Films with Spectroscopic Ellipsometry, Proceedings of Emerging Light Emitting Materials 2025 (EMLEM25) La Canea, Greece, 2025 Oct 8‑10, Poster, https://www.nanoge.org/proceedings/EMLEM25/68c88be5d3083d187ce13720 . | 2025 |
| 10 | C01; A02 | Ascoli, A.; Gemo, E.; Corinto, F.; Bonnin, M.; Gilli, M.; Civalleri, P. P.; Demirkol, A. S.; Messaris, I.; Ntinas, V.; Prousalis, D.; Tetzlaff, R.; Slesazeck, S.; Mikolajick, T.; Chua, L. Ndr Effects in a Locally‑Active Memristor Induce Small‑Signal Amplification in a Simple Cell. In 2025 14th International Conference on Modern Circuits and Systems Technologies (MOCAST); IEEE: Dresden, Germany, 2025; pp 1‑9. https://doi.org/10.1109/MOCAST65744.2025.11083728 . | 2025 |
| 9 | A01; C02 | Buczek, M.; Moos, Z.; Gutsche, A.; Menzel, S.; Dittmann, R. Pr 1‑x Ca x MnO₃‑Based Memristive Heterostructures: Basic Mechanisms and Applications. Chem. Rev. 2025, 125 (13), 6156‑6202. https://doi.org/10.1021/acs.chemrev.4c00813 . | 2025 |
| 8 | B05 | Kavand, N.; Darjani, A.; Niranjan, T.; Kumar, A. RAT: RFET‑Based Analog Hardware Trojan. In 2025 IEEE Computer Society Annual Symposium on VLSI (ISVLSI); IEEE: Kalamata, Greece, 2025; pp 1‑6. https://doi.org/10.1109/ISVLSI65124.2025.11130296 . | 2025 |
| 7 | C03 | Schneider, S.; Beckert, S.; Hammer, R.; König, M.; Moldovan, G.; Pohl, D. STEM EBIC as a Quantitative Probe of Semiconductor Devices. arXiv 2025. https://doi.org/10.48550/ARXIV.2511.11528 . | 2025 |
| 6 | B05 | Darjani, A.; Kavand, N.; Han, Z.; Kumar, A. Structurally Secure Obfuscation: Assessing and Mitigating Structural Vulnerabilities in Circuits Obfuscation. ACM Trans. Des. Autom. Electron. Syst. 2026, 31 (1), 1‑30. https://doi.org/10.1145/3772062 . | 2026 |
| 5 | C01; A02 | Wang, S.; Li, Z.; Pei, M.; Ren, Q.; Deng, M.; Ang, K.-W.; Ascoli, A.; Banerjee, S.; Bonnin, M.; Van De Burgt, Y.; Cheng, B.; Chua, L.; Civalleri, P. P.; Corinto, F.; Cui, T. J.; Das, S.; Demirkol, A. S.; Van Dijken, S.; Fan, Y.; Fang, L.; Farronato, M.; Feng, Z. R.; Gemo, E.; Gilli, M.; Goswami, S.; He, Y.; Huang, C.; Huang, Q.; Hwang, C. S.; Ielmini, D.; Jang, Y. H.; Kuncic, Z.; Lemme, M. C.; Li, C.; Liang, S.‑J.; Liu, K.; Liu, S.; Luo, J.; Ma, Q.; Maass, W.; Mannocci, P.; Messaris, I.; Miao, F.; Mikolajick, T.; Ntinas, V.; Ponis, J.; Prodromakis, T.; Prousalis, D.; Shao, Q.; Slesazeck, S.; Strachan, J. P.; Tan, H.; Tang, J.; Tetzlaff, R.; Tran, L. P. L.; Valov, I.; Vorias, A.; Wang, B.; Wang, J.; Wang, S.; Wang, X.; Wang, Y.; Wu, H.; Xia, Q.; Xiao, K.; Xiao, Z.; Xiong, Z.; Xu, T.; Yang, M.‑J.; Yang, Y.; Zhang, W.; Chai, Y. Technology Roadmap of Bioinspired Computing Hardware. ACS Nano 2026, 20 (10), 8102‑8163. https://doi.org/10.1021/acsnano.5c17087 . | 2026 |
| 4 | B07 | Aliagha, E.; Göhringer, D. Toward Domain‑Aware Energy‑Efficient Reconfigurable Architectures. In 2025 International Conference on Field Programmable Technology (ICFPT); IEEE: Shanghai, China, 2025; pp 280‑281. https://doi.org/10.1109/ICFPT67023.2025.00055 . | 2025 |
| 3 | A06 | Li, D.; Zheng, W.; Ghorbani‑Asl, M.; Scheiter, J.; Sobczak, K.; Kretschmer, S.; Polčák, J.; Jadhao, P. H.; Michałowski, P. P.; Yu, R.; Zhang, J.; Liu, J.; Du, J.; Guo, Q.; Zschech, E.; Šikola, T.; Bonn, M.; Pérez, N.; Nielsch, K.; Krasheninnikov, A. V.; Wang, H. I.; Yu, M.; Feng, X. Triphasic Synthesis of MXenes with Uniform and Controlled Halogen Terminations. Nat. Synth 2026. https://doi.org/10.1038/s44160-025-00970-w . | 2026 |
| 2 | B06 | Khan, A. A.; Benmeziane, H.; Farzaneh, H.; Lima, J.; Simon, W.; Shi, Y.; Yan, Z.; Sebastian, A.; Hu, X. S.; Castrillon, J.; Lammie, C. Tutorial: Hardware‑Aware Compilation and Simulation for In‑Memory Computing. In Proceedings of the International Conference on Compilers, Architecture, and Synthesis for Embedded Systems; ACM: Taipei International Convention Center (TICC) Taipei Taiwan, 2025; pp 31‑32. https://doi.org/10.1145/3742872.3758333 . | 2025 |
| 1 | A06 | Rademacher, N.; Völkel, L.; Reato, E.; Otto, M.; Krotkus, S.; Mischke, J.; Yengel, E.; Mauder, C.; Henning, A.; Heuken, M.; Ran, K.; Mayer, J.; Lemme, M. C. Water‑Based, Large‑Scale Transfer of 2D Materials Grown on Sapphire Substrates. npj 2D Mater Appl 2026, 10 (1), 48. https://doi.org/10.1038/s41699-026-00696-z . | 2026 |
Publications list at TU Dresden Research Portal (FIS)
various
MRS Workshop: Materials and Architecture Co-Design for Energy-Efficient Data Storage and Computing
Prof. Dr. Wenke Weinreich
Fraunhofer IPMS // TU Dresden
Dr.-Ing. Giulio Galderisi
NaMLab gGmbH