Next Generation Electronics
With Active Devices

in Three Dimensions

Next Generation Electronics With Active Devices

in Three Dimensions

Symposium on Schottky Barrier MOS Devices (31 Aug - 1 Sept 2026)

The goal of the symposium is to promote the research of Schottky barrier devices worldwide. The topics cover all materials in which Schotty barrier transistors can be realized (one- and two-dimensional devices, oxide and organic semiconductors, all types of inorganic semiconductors), as well as a wide range of potential applications (embedded electronics, reconfigurable logic, analog circuits, cryo-electronics, quantum computing and neuromorphic applications). Papers that explore both expermental, device and process simulations are welcome. The target audience is for those seeking to learn the current opportunities and challenges of this technology. New aspects and future proposals to move Schottky barrier devices into the mainstream are welcome.